FDS6612A Generic image

FDS6612A

Part No
FDS6612A
Manufacturer
onsemi
Description
N-Channel Power Trench® MOSFET, Logic Level, 30V, 8.4A, 22mΩ
Datasheet
FDS6612A
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8.4 A
    Current Rating 8.4 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 22 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 3 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 560 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.9 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1 W
    Rds On Max 22 mΩ
    Resistance 22 MΩ
    Rise Time 5 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 22 ns
    Turn-On Delay Time 7 ns
    Voltage Rating (DC) 30 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    added to cart View cart