FDS6670A Generic image

FDS6670A

Part No
FDS6670A
Manufacturer
onsemi
Description
Activación Rds(On):8Mohm; Tensión Vgs De Medición Rds(On):10V; Núm. De Contactos:8 |Onsemi FDS6670A
Datasheet
FDS6670A
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 13 A
    Current Rating 13 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 8 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 13 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.22 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.8 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1 W
    Rds On Max 8 mΩ
    Resistance 8 MΩ
    Rise Time 13 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 1.8 V
    Turn-Off Delay Time 40 ns
    Turn-On Delay Time 11 ns
    Voltage Rating (DC) 30 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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