FDS6930B Generic image

FDS6930B

Part No
FDS6930B
Manufacturer
onsemi
Description
Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ
Datasheet
FDS6930B
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.5 A
    Current 55 A
    Current Rating 5.5 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 38 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Fall Time 2 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 412 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.9 V
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 2 W
    Rds On Max 38 mΩ
    Resistance 38 MΩ
    Rise Time 6 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 16 ns
    Turn-On Delay Time 6 ns
    Voltage 30 V
    Voltage Rating (DC) 30 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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