FDS6680AS Generic image

FDS6680AS

Part No
FDS6680AS
Manufacturer
onsemi
Description
The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to
Datasheet
FDS6680AS
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11.5 A
    Current Rating -11.5 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 11 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.24 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1 W
    Rds On Max 10 mΩ
    Recovery Time 18 ns
    Resistance 10 MΩ
    Rise Time 12 ns
    Schedule B 8541290080
    Threshold Voltage 1.5 V
    Turn-Off Delay Time 27 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) -30 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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