FDP55N06 Generic image

FDP55N06

Part No
FDP55N06
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 60 V, 55 A, 22 mΩ, TO-220
Datasheet
FDP55N06
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 55 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 22 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 95 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.51 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 114 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 114 W
    Rds On Max 22 mΩ
    Resistance 22 mΩ
    Rise Time 130 ns
    Threshold Voltage 2 V
    Turn-Off Delay Time 70 ns
    Turn-On Delay Time 30 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
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