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FDS6675

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Specification	Value
Continuous Drain Current (ID)	11 A
Current Rating	-11 A
Drain to Source Breakdown Voltage	-30 V
Drain to Source Resistance	14 mΩ
Drain to Source Voltage (Vdss)	-30 V
Dual Supply Voltage	-30 V
Element Configuration	Single
Fall Time	100 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	3 nF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	2.5 W
Min Breakdown Voltage	30 V
Min Operating Temperature	-55 °C
Nominal Vgs	-1.7 V
Number of Channels	1
Number of Elements	1
Packaging	Cut Tape
Power Dissipation	1 W
Rds On Max	14 mΩ
Resistance	14 mΩ
Rise Time	16 ns
Schedule B	8541290080
Termination	SMD/SMT
Threshold Voltage	-1.7 V
Turn-Off Delay Time	50 ns
Turn-On Delay Time	12 ns
Voltage Rating (DC)	-30 V
Case/Package	SOIC
Mount	Surface Mount
Number of Pins	8
Number of Terminals	8
Weight	130 mg
Height	1.75 mm