FDP61N20 Generic image

FDP61N20

Part No
FDP61N20
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41mΩ, TO-220
Datasheet
FDP61N20
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 61 A
    Current 61 A
    Current Rating 61 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 41 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 170 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 3.38 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 417 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 417 W
    Rds On Max 41 mΩ
    Resistance 41 MΩ
    Rise Time 215 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 125 ns
    Turn-On Delay Time 40 ns
    Voltage 200 V
    Voltage Rating (DC) 200 V
    Case/Package TO-220-3
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 4.535924 g
    Height 20.4 mm
    Length 10.67 mm
    Width 4.83 mm
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