FDP18N20F Generic image

FDP18N20F

Part No
FDP18N20F
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, FRFET®, 200 V, 18 A, 140 mΩ, TO-220
Datasheet
FDP18N20F
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 18 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 145 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 40 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.18 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 100 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 100 W
    Rds On Max 145 mΩ
    Resistance 145 MΩ
    Rise Time 50 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 50 ns
    Turn-On Delay Time 16 ns
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 16.3 mm
    Length 10.67 mm
    Width 4.7 mm
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