FDP51N25 Generic image

FDP51N25

Part No
FDP51N25
Manufacturer
onsemi
Description
Transistor MOSFET N Channel 250 Volt 51.6 Amp 3 Pin 3+ Tab TO-220 Rail
Datasheet
FDP51N25
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 51 A
    Drain to Source Breakdown Voltage 250 V
    Drain to Source Resistance 60 mΩ
    Drain to Source Voltage (Vdss) 250 V
    Element Configuration Single
    Fall Time 130 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 3.41 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 320 W
    Min Breakdown Voltage 250 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 320 W
    Rds On Max 60 mΩ
    Resistance 60 MΩ
    Rise Time 465 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 98 ns
    Turn-On Delay Time 62 ns
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.67 mm
    Width 4.83 mm
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