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FDP12N60NZ
- Part No
- FDP12N60NZ
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220
- Datasheet
- FDP12N60NZ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 12 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 650 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 60 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.676 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 240 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 240 W |
| Rds On Max | 650 mΩ |
| Rise Time | 50 ns |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 80 ns |
| Turn-On Delay Time | 25 ns |
| Case/Package | TO-220 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 1.8 g |
| Height | 16.51 mm |
| Length | 10.67 mm |
| Width | 4.83 mm |
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