FDP80N06 Generic image

FDP80N06

Part No
FDP80N06
Manufacturer
onsemi
Description
N-Channel Power MOSFET, UniFETTM, 60 V, 80 A, 10 mΩ, TO-220
Datasheet
FDP80N06
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 80 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 113 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 3.19 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 176 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Bulk
    Power Dissipation 176 W
    Rds On Max 10 mΩ
    Resistance 10 MΩ
    Rise Time 259 ns
    Turn-Off Delay Time 136 ns
    Turn-On Delay Time 32 ns
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 16.51 mm
    Length 10.67 mm
    Width 4.83 mm
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