FDS6692A Generic image

FDS6692A

Part No
FDS6692A
Manufacturer
onsemi
Description
N-Channel 30 V 11.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
Datasheet
FDS6692A
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 11.5 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 32 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.61 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.47 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 1.47 W
    Rds On Max 11.5 mΩ
    Resistance 11.5 MΩ
    Rise Time 32 ns
    Threshold Voltage 1.2 V
    Turn-Off Delay Time 33 ns
    Turn-On Delay Time 8 ns
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.575 mm
    Length 4.9 mm
    Width 3.9 mm
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