FDS6681Z Generic image

FDS6681Z

Part No
FDS6681Z
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V
Datasheet
FDS6681Z
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 20 A
    Current Rating -20 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 4.6 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Dual Supply Voltage 30 V
    Element Configuration Single
    Fall Time 380 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 7.54 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 2.5 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.8 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1 W
    Rds On Max 4.6 mΩ
    Resistance 4.6 MΩ
    Rise Time 9 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage -1.8 V
    Turn-Off Delay Time 660 ns
    Turn-On Delay Time 20 ns
    Voltage Rating (DC) -30 V
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 130 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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