FDS4559 Generic image

FDS4559

Part No
FDS4559
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDS4559 - DUAL N/P CHANNEL MOSFET, 60V, SOIC
Datasheet
FDS4559
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4.5 A
    Current Rating 4.5 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 55 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Dual Supply Voltage 60 V
    Element Configuration Dual
    Fall Time 12 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 650 pF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 2 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.2 V
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 2 W
    Rds On Max 55 mΩ
    Resistance 55 MΩ
    Rise Time 10 ns
    Schedule B 8541290080
    Termination SMD/SMT
    Threshold Voltage 2.2 V
    Turn-Off Delay Time 19 ns
    Case/Package SOIC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Weight 187 mg
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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