FDS6910 Generic image

FDS6910

Part No
FDS6910
Manufacturer
onsemi
Description
Dual N-Channel 30 V 13 mOhm Logic Level PowerTrench Mosfet- SOIC-8
Datasheet
FDS6910
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7.5 A
    Current 75 A
    Current Rating 7.5 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 13 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Dual
    Fall Time 5 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.13 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.6 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.8 V
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 900 mW
    Rds On Max 13 mΩ
    Resistance 13 MΩ
    Rise Time 5 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 1.8 V
    Turn-Off Delay Time 26 ns
    Turn-On Delay Time 9 ns
    Voltage 30 V
    Voltage Rating (DC) 30 V
    Case/Package SOIC
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 8
    Height 1.75 mm
    Length 5 mm
    Width 4 mm
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