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FDMS86150ET100
- Part No
- FDMS86150ET100
- Manufacturer
- onsemi
- Description
- N-Channel Shielded Gate PowerTrench® MOSFET 100V, 128A, 4.85mΩ
- Datasheet
- FDMS86150ET100
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 128 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 4.85 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 6 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 4.065 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 187 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 3.3 W |
| Rds On Max | 4.85 mΩ |
| Rise Time | 8.3 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 28 ns |
| Turn-On Delay Time | 18 ns |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 56.5 mg |
| Height | 1.1 mm |
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