FDN5618P Generic image

FDN5618P

Part No
FDN5618P
Manufacturer
onsemi
Description
Power MOSFET, P Channel, 60 V, 1.25 A, 170 Milliohms, SOT-23, 3 Pins, Surface Mount
Datasheet
FDN5618P
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.25 A
    Current Rating -1.25 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 170 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Dual Supply Voltage -60 V
    Element Configuration Single
    Fall Time 8 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 430 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 500 mW
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs 20 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 500 mW
    Rds On Max 170 mΩ
    Resistance 170 mΩ
    Rise Time 8 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Termination SMD/SMT
    Threshold Voltage -1.6 V
    Turn-Off Delay Time 16.5 ns
    Turn-On Delay Time 6.5 ns
    Voltage Rating (DC) -60 V
    Case/Package SOT-23-3
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
    Height 1.22 mm
    Length 2.92 mm
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