FDN339AN Generic image

FDN339AN

Part No
FDN339AN
Manufacturer
onsemi
Description
N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3A, 35mΩ
Datasheet
FDN339AN
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3 A
    Current Rating 3 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 35 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Dual Supply Voltage 20 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 700 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 500 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs 850 mV
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 460 mW
    Rds On Max 35 mΩ
    Resistance 35 mΩ
    Rise Time 10 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Termination SMD/SMT
    Threshold Voltage 850 mV
    Turn-Off Delay Time 18 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) 20 V
    Case/Package SOT-23-3
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
    Height 1.12 mm
    Length 2.92 mm
    Width 1.4 mm
    added to cart View cart