FDN342P Generic image

FDN342P

Part No
FDN342P
Manufacturer
onsemi
Description
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2A, 80mΩ
Datasheet
FDN342P
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2 A
    Current Rating -2 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 80 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Dual Supply Voltage 20 V
    Element Configuration Single
    Fall Time 8 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 635 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 460 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.05 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 500 mW
    Rds On Max 80 mΩ
    Resistance 80 mΩ
    Rise Time 8 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Termination SMD/SMT
    Threshold Voltage 1.05 V
    Turn-Off Delay Time 9 ns
    Turn-On Delay Time 20 ns
    Voltage Rating (DC) -20 V
    Case/Package SOT-23-3
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
    Height 1.12 mm
    Length 2.92 mm
    Width 1.4 mm
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