FDN352AP Generic image

FDN352AP

Part No
FDN352AP
Manufacturer
onsemi
Description
FDN352AP Series 30 V 1.3 A 180 mOhm Single P-Ch. PowerTrench® MOSFET-SSOT-3
Datasheet
FDN352AP
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.3 A
    Current 13 A
    Current Rating -1.3 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 180 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Dual Supply Voltage -30 V
    Element Configuration Single
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 150 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 500 mW
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Nominal Vgs -2 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 500 mW
    Rds On Max 180 mΩ
    Resistance 180 MΩ
    Rise Time 15 ns
    Schedule B 8541210080
    Termination SMD/SMT
    Threshold Voltage -2 V
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 4 ns
    Voltage 30 V
    Voltage Rating (DC) -30 V
    Case/Package TO-236-3
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 1.22 mm
    Length 2.92 mm
    Width 1.4 mm
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