FDN335N Generic image

FDN335N

Part No
FDN335N
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount
Datasheet
FDN335N
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.7 A
    Current 17 A
    Current Rating 1.7 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 70 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Dual Supply Voltage 25 V
    Element Configuration Single
    Fall Time 8.5 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 310 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 500 mW
    Manufacturer Package Identifier CASE 527AG-01
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs 800 mV
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 500 mW
    Rds On Max 70 mΩ
    Resistance 70 MΩ
    Rise Time 8.5 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Termination SMD/SMT
    Threshold Voltage 900 mV
    Turn-Off Delay Time 11 ns
    Turn-On Delay Time 5 ns
    Voltage 20 V
    Voltage Rating (DC) 20 V
    Case/Package SOT-23
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Height 940 µm
    Length 2.92 mm
    Width 3.05 mm
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