FDP054N10 Generic image

FDP054N10

Part No
FDP054N10
Manufacturer
onsemi
Description
FAIRCHILD SEMICONDUCTOR FDP054N10 MOSFET Transistor, N Channel, 120 A, 100 V, 0.0046 ohm, 10 V, 3.5 V
Datasheet
FDP054N10
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 120 A
    Drain to Source Resistance 5.5 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 39 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 13.28 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 263 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 263 W
    Rds On Max 5.5 mΩ
    Rise Time 92 ns
    Threshold Voltage 3.5 V
    Turn-Off Delay Time 80 ns
    Turn-On Delay Time 44 ns
    Case/Package TO-220
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 2.421 g
    Height 15.38 mm
    Length 10.1 mm
    Width 4.7 mm
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