FDP090N10 Generic image

FDP090N10

Part No
FDP090N10
Manufacturer
onsemi
Description
Single N-Channel 100 V 208 W 116 nC PowerTrench Through Hole Mosfet - TO-220-3
Datasheet
FDP090N10
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 75 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 9 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 149 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 8.225 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 208 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 3.5 V
    Number of Elements 1
    Power Dissipation 208 W
    Rds On Max 9 mΩ
    Rise Time 322 ns
    Turn-Off Delay Time 166 ns
    Turn-On Delay Time 107 ns
    Case/Package TO-220
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 16.51 mm
    Length 10.67 mm
    Width 4.83 mm
    added to cart View cart