FDMS86200 Generic image

FDMS86200

Part No
FDMS86200
Manufacturer
onsemi
Description
Fairchild FDMS86200 N-channel MOSFET Transistor, 52 A, 150 V, 8-Pin Power 56
Datasheet
FDMS86200
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9.6 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 18 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Element Configuration Single
    Fall Time 5.8 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.715 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 104 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 18 mΩ
    Resistance 21 MΩ
    Rise Time 7.9 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 27 ns
    Turn-On Delay Time 13 ns
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 68.1 mg
    Height 1.1 mm
    Length 5 mm
    Width 6 mm
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