FDMS86104 Generic image

FDMS86104

Part No
FDMS86104
Manufacturer
onsemi
Description
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 16A, 24mΩ
Datasheet
FDMS86104
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7 A
    Current 16 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 24 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 3.2 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 923 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 73 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape and Reel
    Power Dissipation 2.5 W
    Rds On Max 24 mΩ
    Rise Time 3.5 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.9 V
    Turn-Off Delay Time 14.3 ns
    Turn-On Delay Time 8 ns
    Voltage 100 V
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Height 1.05 mm
    Length 5 mm
    Width 6 mm
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