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FDMS86202ET120
- Part No
- FDMS86202ET120
- Manufacturer
- onsemi
- Description
- N-Channel Shielded Gate PowerTrench® MOSFET 120V, 102A, 7.2mΩ
- Datasheet
- FDMS86202ET120
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 102 A |
| Drain to Source Breakdown Voltage | 120 V |
| Drain to Source Resistance | 7.2 mΩ |
| Drain to Source Voltage (Vdss) | 120 V |
| Element Configuration | Single |
| Fall Time | 5 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 4.585 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 187 W |
| Min Breakdown Voltage | 120 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 3.3 W |
| Rds On Max | 7.2 mΩ |
| Rise Time | 6 ns |
| Turn-Off Delay Time | 27.2 ns |
| Turn-On Delay Time | 21 ns |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 5 |
| Weight | 56.5 mg |
| Height | 1.1 mm |
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