FDMS86150 Generic image

FDMS86150

Part No
FDMS86150
Manufacturer
onsemi
Description
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 80A, 4.85mΩ
Datasheet
FDMS86150
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 16 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 4.85 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 6 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 4.065 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 156 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.7 W
    Rds On Max 4.85 mΩ
    Rise Time 8.3 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 28 ns
    Turn-On Delay Time 18 ns
    Mount Surface Mount
    Number of Pins 8
    Number of Terminals 5
    Weight 56.5 mg
    Height 1.1 mm
    Length 5.1 mm
    Width 6.25 mm
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