FDD8876 Generic image

FDD8876

Part No
FDD8876
Manufacturer
onsemi
Description
Transistor, mosfet, n-Channel,30V V(Br)Dss,15A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FDD8876
Datasheet
FDD8876
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 15 A
    Current Rating 73 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 37 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.7 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 70 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 70 W
    Rds On Max 8.2 mΩ
    Rise Time 91 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 44 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) 30 V
    Case/Package TO-252-3
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
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