FDD8880 Generic image

FDD8880

Part No
FDD8880
Manufacturer
onsemi
Description
PowerTrench® MOSFET, N-Channel, 30V, 58A, 9mΩ
Datasheet
FDD8880
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 35 A
    Current Rating 58 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 12 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 32 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.26 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 55 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 55 W
    Rds On Max 9 mΩ
    Resistance 9 MΩ
    Rise Time 91 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 38 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) 30 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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