FDG6308P Generic image

FDG6308P

Part No
FDG6308P
Manufacturer
onsemi
Description
Transistor, Mosfet, Matched Pair, P-channel, 20V V(br)dss, 600MA I(d), TSOP
Datasheet
FDG6308P
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 600 mA
    Current Rating -600 mA
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 400 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Element Configuration Dual
    Fall Time 15 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 153 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 300 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Power Dissipation 300 mW
    Rds On Max 400 mΩ
    Resistance 400 MΩ
    Rise Time 15 ns
    Schedule B 8541210080
    Turn-Off Delay Time 7 ns
    Turn-On Delay Time 5 ns
    Voltage Rating (DC) -20 V
    Case/Package SC
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 28 mg
    Height 1.1 mm
    Length 2 mm
    Width 1.25 mm
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