FDG316P Generic image

FDG316P

Part No
FDG316P
Manufacturer
onsemi
Description
Logic Level PowerTrench® MOSFET, P-Channel, -30 V, -1.6 A, 190 mΩ
Datasheet
FDG316P
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.6 A
    Current Rating 1.6 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 190 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Element Configuration Single
    Fall Time 9 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 165 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 750 mW
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 750 mW
    Rds On Max 190 mΩ
    Resistance 190 MΩ
    Rise Time 9 ns
    Schedule B 8541210080
    Threshold Voltage -1.6 V
    Turn-Off Delay Time 14 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) 30 V
    Case/Package SC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 28 mg
    Height 1.1 mm
    Length 2 mm
    Width 1.25 mm
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