FDG327N Generic image

FDG327N

Part No
FDG327N
Manufacturer
onsemi
Description
Transistor, Mosfet, N-channel, 20V V(br)dss, 1.5A I(d), SOT-363
Datasheet
FDG327N
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.5 A
    Current Rating 1.5 A
    Drain to Source Breakdown Voltage 20 V
    Drain to Source Resistance 90 mΩ
    Drain to Source Voltage (Vdss) 20 V
    Element Configuration Single
    Fall Time 6.5 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 423 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 380 mW
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs 700 mV
    Number of Elements 1
    Power Dissipation 420 mW
    Rds On Max 90 mΩ
    Resistance 90 mΩ
    Rise Time 6.5 ns
    Schedule B 8541210080
    Threshold Voltage 700 mV
    Turn-Off Delay Time 14 ns
    Turn-On Delay Time 6 ns
    Voltage Rating (DC) 20 V
    Case/Package SC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 28 mg
    Height 1 mm
    Length 2 mm
    Width 1.25 mm
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