FDD8870 Generic image

FDD8870

Part No
FDD8870
Manufacturer
onsemi
Description
PowerTrench® MOSFET, N-Channel, 30V, 160A, 3.9mΩ
Datasheet
FDD8870
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 21 A
    Current Rating 160 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 4.4 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 42 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 5.16 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 160 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 160 W
    Rds On Max 3.9 mΩ
    Resistance 4.4 MΩ
    Rise Time 83 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 83 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) 30 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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