FDD86252 Generic image

FDD86252

Part No
FDD86252
Manufacturer
onsemi
Description
Shielded Gate PowerTrench® MOSFET, N-Channel, 150 V, 27 A, 52 mΩ
Datasheet
FDD86252
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 52 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Element Configuration Single
    Fall Time 3 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 985 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 89 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.1 W
    Rds On Max 52 mΩ
    Rise Time 1.8 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3.1 V
    Turn-Off Delay Time 14 ns
    Turn-On Delay Time 8.3 ns
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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