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SI4532DY
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Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 3.9 A |
| Current Rating | 3.9 A |
| Drain to Source Breakdown Voltage | 30 V |
| Drain to Source Resistance | 65 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Fall Time | 6 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 235 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | 3 V |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Power Dissipation | 2 W |
| Rds On Max | 65 mΩ |
| Resistance | 65 MΩ |
| Rise Time | 8 ns |
| Schedule B | 8541290080 |
| Threshold Voltage | 3 V |
| Turn-Off Delay Time | 18 ns |
| Turn-On Delay Time | 18 ns |
| Voltage Rating (DC) | 30 V |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 230.4 mg |
| Height | 1.75 mm |
| Length | 5 mm |
| Width | 4 mm |
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