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SI4435DY
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Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 8.8 A |
| Current Rating | -8.8 A |
| Drain to Source Breakdown Voltage | -30 V |
| Drain to Source Resistance | 20 mΩ |
| Drain to Source Voltage (Vdss) | -30 V |
| Dual Supply Voltage | -30 V |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.604 nF |
| Max Junction Temperature (Tj) | 175 °C |
| Max Operating Temperature | 175 °C |
| Max Power Dissipation | 2.5 W |
| Min Breakdown Voltage | 30 V |
| Min Operating Temperature | -55 °C |
| Nominal Vgs | -1.7 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 1 W |
| Rds On Max | 20 mΩ |
| Resistance | 20 MΩ |
| Rise Time | 13.5 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Termination | SMD/SMT |
| Threshold Voltage | -1.7 V |
| Turn-Off Delay Time | 42 ns |
| Turn-On Delay Time | 13 ns |
| Voltage Rating (DC) | -30 V |
| Case/Package | SOIC |
| Mount | Surface Mount |
| Number of Pins | 8 |
| Number of Terminals | 8 |
| Weight | 130 mg |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Width | 3.9 mm |
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