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NDS9952A

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Specification	Value
Continuous Drain Current (ID)	3.7 A
Current Rating	2.9 A
Drain to Source Breakdown Voltage	30 V
Drain to Source Resistance	80 mΩ
Drain to Source Voltage (Vdss)	30 V
Dual Supply Voltage	30 V
Element Configuration	Dual
Fall Time	8 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	320 pF
Max Junction Temperature (Tj)	150 °C
Max Operating Temperature	150 °C
Max Power Dissipation	2 W
Min Breakdown Voltage	30 V
Min Operating Temperature	-55 °C
Nominal Vgs	1.7 V
Number of Channels	2
Number of Elements	2
Packaging	Cut Tape
Power Dissipation	900 mW
Rds On Max	80 mΩ
Resistance	80 MΩ
Rise Time	21 ns
Schedule B	8541290080
Termination	SMD/SMT
Threshold Voltage	1.7 V
Turn-Off Delay Time	21 ns
Case/Package	SOIC
Mount	Surface Mount
Number of Pins	8
Number of Terminals	8
Weight	230.4 mg
Height	1.75 mm