NDT014L Generic image

NDT014L

Part No
NDT014L
Manufacturer
onsemi
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ
Datasheet
NDT014L
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.8 A
    Current Rating 2.8 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 160 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Dual Supply Voltage 60 V
    Element Configuration Single
    Fall Time 10 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 214 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 3 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -65 °C
    Nominal Vgs 1.5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.1 W
    Rds On Max 160 mΩ
    Resistance 160 mΩ
    Rise Time 14 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 1.5 V
    Turn-Off Delay Time 15 ns
    Turn-On Delay Time 6 ns
    Voltage Rating (DC) 60 V
    Case/Package SOT-223
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Weight 188 mg
    Height 1.8 mm
    Length 6.7 mm
    Width 3.7 mm
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