NDS351N Generic image

NDS351N

Part No
NDS351N
Manufacturer
onsemi
Description
N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.1A, 250mΩ
Datasheet
NDS351N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.1 A
    Current Rating 1.1 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 160 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 16 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 140 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 500 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 500 mW
    Rds On Max 160 mΩ
    Rise Time 16 ns
    Schedule B 8541210080
    Turn-Off Delay Time 26 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) 30 V
    Case/Package TO-236-3
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 3
    Weight 30 mg
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