NDC7002N Generic image

NDC7002N

Part No
NDC7002N
Manufacturer
onsemi
Description
Dual N-Channel Enhancement Mode Field Effect Transistor 50V, 0.51A, 2Ω
Datasheet
NDC7002N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 510 mA
    Current Rating 350 mA
    Drain to Source Breakdown Voltage 50 V
    Drain to Source Resistance 2 Ω
    Drain to Source Voltage (Vdss) 50 V
    Dual Supply Voltage 50 V
    Element Configuration Dual
    Fall Time 6 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 20 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 960 mW
    Min Breakdown Voltage 50 V
    Min Operating Temperature -55 °C
    Nominal Vgs 1.9 V
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 1.4 W
    Rds On Max 2 Ω
    Resistance 2 Ω
    Rise Time 6 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Threshold Voltage 1.9 V
    Turn-Off Delay Time 11 ns
    Turn-On Delay Time 6 ns
    Voltage Rating (DC) 50 V
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 900 µm
    Length 3 mm
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