Generic image
SGL50N60RUFDTU
- Part No
- SGL50N60RUFDTU
- Manufacturer
- onsemi
- Description
- Trans IGBT Chip N=-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-264 Rail
- Datasheet
- SGL50N60RUFDTU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 600 V |
| Collector Emitter Saturation Voltage | 2.5 V |
| Collector Emitter Voltage (VCEO) | 600 V |
| Continuous Collector Current | 80 A |
| Current Rating | 40 A |
| Element Configuration | Single |
| Fall Time | 160 ns |
| Max Collector Current | 80 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 250 W |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 250 W |
| Reverse Recovery Time | 70 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 66 ns |
| Turn-On Delay Time | 26 ns |
| Voltage Rating (DC) | 100 V |
| Case/Package | TO-264-3 |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.756 g |
| Height | 29 mm |
| Length | 20 mm |
| Width | 5 mm |
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