FDD2572 Generic image

FDD2572

Part No
FDD2572
Manufacturer
onsemi
Description
N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ
Datasheet
FDD2572
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4 A
    Current Rating 29 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 54 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Dual Supply Voltage 150 V
    Element Configuration Single
    Fall Time 14 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.77 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 135 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 135 W
    Rds On Max 54 mΩ
    Resistance 54 MΩ
    Rise Time 14 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage 4 V
    Turn-Off Delay Time 31 ns
    Turn-On Delay Time 11 ns
    Voltage Rating (DC) 150 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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