FDC658P Generic image

FDC658P

Part No
FDC658P
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FDC658P - MOSFET Transistor, P Channel, 4 A, 30 V, 0.041 ohm, 10 V, 1.7 V
Datasheet
FDC658P
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 4 A
    Current Rating -4 A
    Drain to Source Breakdown Voltage -30 V
    Drain to Source Resistance 50 mΩ
    Drain to Source Voltage (Vdss) -30 V
    Element Configuration Single
    Fall Time 16 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 750 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.6 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 800 mW
    Rds On Max 50 mΩ
    Resistance 50 mΩ
    Rise Time 14 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -1.7 V
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) -30 V
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 1.1 mm
    Length 3 mm
    Width 1.7 mm
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