FDD10AN06A0 Generic image

FDD10AN06A0

Part No
FDD10AN06A0
Manufacturer
onsemi
Description
Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
Datasheet
FDD10AN06A0
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11 A
    Current 50 A
    Current Rating 50 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 10.5 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 32 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.84 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 135 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 135 W
    Rds On Max 10.5 mΩ
    Resistance 10.5 MΩ
    Rise Time 79 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 32 ns
    Turn-On Delay Time 8 ns
    Voltage 60 V
    Voltage Rating (DC) 60 V
    Case/Package TO-252-3
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 4.535924 g
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
    added to cart View cart