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FDD18N20LZ
- Part No
- FDD18N20LZ
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, Logic Level, UniFETTM, 200 V, 16 A, 125 mΩ, DPAK
- Datasheet
- FDD18N20LZ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 16 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 130 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 50 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.575 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 89 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 89 W |
| Rds On Max | 125 mΩ |
| Resistance | 125 MΩ |
| Rise Time | 20 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 135 ns |
| Turn-On Delay Time | 15 ns |
| Case/Package | DPAK |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
| Height | 2.517 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
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