FDD86250 Generic image

FDD86250

Part No
FDD86250
Manufacturer
onsemi
Description
Transistor, N-channel, shielded gate, PowerTrench MOSFET, 150V 51A, 22mOhm, 8A
Datasheet
FDD86250
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 22 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Element Configuration Single
    Fall Time 4 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 2.11 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 132 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.1 W
    Rds On Max 22 mΩ
    Resistance 45 MΩ
    Rise Time 3.7 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.9 V
    Turn-Off Delay Time 20 ns
    Turn-On Delay Time 11.2 ns
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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