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FDD10N20LZTM
- Part No
- FDD10N20LZTM
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, UniFETTM, Logic Level, 200 V, 7.6 A, 360 mΩ, DPAK
- Datasheet
- FDD10N20LZTM
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 7.6 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 380 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 25 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 585 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 56 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 83 W |
| Rds On Max | 360 mΩ |
| Rise Time | 15 ns |
| Turn-Off Delay Time | 55 ns |
| Turn-On Delay Time | 10 ns |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
| Height | 2.517 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
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