FDC8602 Generic image

FDC8602

Part No
FDC8602
Manufacturer
onsemi
Description
Dual N-Channel Shielded Gate PowerTrench® MOSFET, 100 V, 1.2 A, 350 mΩ
Datasheet
FDC8602
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.2 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 350 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Dual
    Fall Time 2.3 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 70 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 960 mW
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Packaging Tape and Reel
    Power Dissipation 690 mW
    Rds On Max 350 mΩ
    Rise Time 1.7 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Threshold Voltage 3.2 V
    Turn-Off Delay Time 5.4 ns
    Turn-On Delay Time 3.5 ns
    Case/Package SOT-23-6
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 1.1 mm
    Length 3 mm
    Width 1.7 mm
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