FDC86244 Generic image

FDC86244

Part No
FDC86244
Manufacturer
onsemi
Description
N-Channel Shielded Gate Power Trench® MOSFET, 150 V, 2.3 A, 144 mΩ
Datasheet
FDC86244
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.3 A
    Drain to Source Breakdown Voltage 150 V
    Drain to Source Resistance 144 mΩ
    Drain to Source Voltage (Vdss) 150 V
    Element Configuration Single
    Fall Time 3.1 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 345 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.6 W
    Min Breakdown Voltage 150 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 1.6 W
    Rds On Max 144 mΩ
    Rise Time 1.4 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 4.7 ns
    Case/Package SOT-23-6
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 36 mg
    Height 1.1 mm
    Length 3 mm
    Width 1.7 mm
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