FDG8850NZ Generic image

FDG8850NZ

Part No
FDG8850NZ
Manufacturer
onsemi
Description
N-Channel PowerTrench® MOSFET, Dual, 30V, 0.75A, 0.4Ω
Datasheet
FDG8850NZ
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 750 mA
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 400 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Dual Supply Voltage 30 V
    Element Configuration Dual
    Fall Time 1 ns
    Gate to Source Voltage (Vgs) 12 V
    Input Capacitance 120 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 360 mW
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Channels 2
    Number of Elements 2
    Packaging Cut Tape
    Power Dissipation 360 mW
    Rds On Max 400 mΩ
    Resistance 400 mΩ
    Rise Time 1 ns
    Schedule B 8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
    Termination SMD/SMT
    Threshold Voltage 1 V
    Turn-Off Delay Time 9 ns
    Turn-On Delay Time 4 ns
    Case/Package SC
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 6
    Number of Terminals 6
    Weight 28 mg
    Height 1.1 mm
    Length 2 mm
    Width 1.25 mm
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